FAIRCHILD SEMICONDUCTOR FQPF65N06 晶体管, MOSFET, N沟道, 40 A, 60 V, 16 mohm, 10 V, 4 V
The is a QFET® N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
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- 100% Avalanche tested
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- 48nC Typical low gate charge
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- 100pF Typical low Crss
额定电压DC 60.0 V
额定电流 40.0 A
针脚数 3
漏源极电阻 0.016 Ω
极性 N-Channel
耗散功率 56 W
阈值电压 4 V
漏源极电压Vds 60 V
漏源击穿电压 60.0 V
栅源击穿电压 ±25.0 V
连续漏极电流Ids 40.0 A
上升时间 160 ns
输入电容Ciss 2410pF @25VVds
额定功率Max 56 W
下降时间 105 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 56W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.16 mm
宽度 4.7 mm
高度 9.19 mm
封装 TO-220-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQPF65N06 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STP55NF06 意法半导体 | 功能相似 | FQPF65N06和STP55NF06的区别 |
STP60NF06 意法半导体 | 功能相似 | FQPF65N06和STP60NF06的区别 |
STD18N55M5 意法半导体 | 功能相似 | FQPF65N06和STD18N55M5的区别 |