FAIRCHILD SEMICONDUCTOR FCP11N60N 功率场效应管, MOSFET, N沟道, 10.8 A, 600 V, 0.255 ohm, 10 V, 2 V
Description
The SupreMOS MOSFET, ’s next generation of high voltage super-junction MOSFETs,employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
Features
•RDSon = 0.255Ω Typ.@ VGS= 10V, ID= 5.4A
• Ultra Low Gate Charge Typ. Qg = 27.4nC
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
针脚数 3
漏源极电阻 0.255 Ω
极性 N-Channel
耗散功率 94 W
阈值电压 2 V
漏源极电压Vds 600 V
连续漏极电流Ids 10.8A
上升时间 9.1 ns
输入电容Ciss 1505pF @100VVds
额定功率Max 94 W
下降时间 10 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 94W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.16 mm
宽度 4.7 mm
高度 9.4 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15