FDS86540

FAIRCHILD SEMICONDUCTOR  FDS86540  晶体管, MOSFET, N沟道, 18 A, 60 V, 0.0037 ohm, 10 V, 3.1 V

The is a N-channel MOSFET produced using Semiconductor"s PowerTrench® process. It is designed specifically to improve the overall efficiency and to minimize switch node ringing of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON, fast switching speed and body diode reverse recovery performance. It is suitable for synchronous rectifier and load switch applications.

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High performance Trench technology for extremely low RDS ON

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High power and current handing capability in a widely used surface-mount package

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100% UIL tested