FAIRCHILD SEMICONDUCTOR FDP5800 晶体管, MOSFET, N沟道, 80 A, 60 V, 0.0046 ohm, 20 V, 2.5 V
The is a N-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification, battery protection circuit and uninterruptible power supplies applications.
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- High performance Trench technology for extremely low RDS ON
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- Low gate charge
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- High power and current handing capability
额定电压DC 60.0 V
额定电流 14.0 A
针脚数 3
漏源极电阻 0.0046 Ω
极性 N-Channel
耗散功率 242 mW
阈值电压 2.5 V
输入电容 9.16 nF
栅电荷 145 nC
漏源极电压Vds 60 V
漏源击穿电压 60.0 V
栅源击穿电压 60.0 V
连续漏极电流Ids 80.0 A
上升时间 19 ns
输入电容Ciss 9160pF @15VVds
额定功率Max 242 W
下降时间 9 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 242W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 9.9 mm
宽度 4.5 mm
高度 15.7 mm
封装 TO-220-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99