FAIRCHILD SEMICONDUCTOR FQP12N60C 功率场效应管, MOSFET, N沟道, 12 A, 600 V, 530 mohm, 10 V, 4 V
The is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using "s proprietary, planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high efficient switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology. This product is general usage and suitable for many different applications.
- .
- Low gate charge
- .
- 100% Avalanche tested
- .
- Improved system reliability in PFC and soft switching topologies
- .
- Switching loss improvements
- .
- Lower conduction loss
额定电压DC 600 V
额定电流 12.0 A
针脚数 3
漏源极电阻 530 mΩ
极性 N-Channel
耗散功率 225 W
阈值电压 4 V
输入电容 2.29 nF
栅电荷 63.0 nC
漏源极电压Vds 600 V
漏源击穿电压 600 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 12.0 A
输入电容Ciss 2290pF @25VVds
额定功率Max 225 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 225W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQP12N60C Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FQP12N60 飞兆/仙童 | 类似代替 | FQP12N60C和FQP12N60的区别 |
STP10NK60Z 意法半导体 | 功能相似 | FQP12N60C和STP10NK60Z的区别 |
STP10NM60N 意法半导体 | 功能相似 | FQP12N60C和STP10NM60N的区别 |