FCP190N60

FAIRCHILD SEMICONDUCTOR  FCP190N60  功率场效应管, MOSFET, N沟道, 20.2 A, 600 V, 0.17 ohm, 10 V, 2.5 V

The is a N-channel SuperFET® II high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

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Ultra low gate charge Qg = 57nC

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Low effective output capacitance Coss.eff = 160pF

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100% avalanche tested