FAIRCHILD SEMICONDUCTOR FQP34N20 晶体管, MOSFET, N沟道, 31 A, 200 V, 0.06 ohm, 10 V, 5 V
The is a QFET® N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.
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- 100% Avalanche tested
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- 60nC Typical low gate charge
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- 55pF Typical low Crss
额定电压DC 200 V
额定电流 31.0 A
针脚数 3
漏源极电阻 0.06 Ω
极性 N-Channel
耗散功率 180 W
阈值电压 5 V
漏源极电压Vds 200 V
漏源击穿电压 200 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 31.0 A
上升时间 280 ns
输入电容Ciss 3100pF @25VVds
额定功率Max 180 W
下降时间 115 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 180W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.1 mm
宽度 4.7 mm
高度 9.4 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQP34N20 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STP55NF06 意法半导体 | 功能相似 | FQP34N20和STP55NF06的区别 |
STP80NF10 意法半导体 | 功能相似 | FQP34N20和STP80NF10的区别 |
SPA06N80C3 英飞凌 | 功能相似 | FQP34N20和SPA06N80C3的区别 |