FAIRCHILD SEMICONDUCTOR FCPF11N60 功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.32 ohm, 10 V, 5 V
The is a 600V N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
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- Ultra low gate charge Qg = 40nC
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- Low effective output capacitance Coss.eff = 95pF
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- 100% avalanche tested
额定电压DC 600 V
额定电流 11.0 A
针脚数 3
漏源极电阻 0.32 Ω
极性 N-Channel
耗散功率 36 W
阈值电压 5 V
输入电容 1.15 nF
栅电荷 40.0 nC
漏源极电压Vds 600 V
漏源击穿电压 650 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 11.0 A
上升时间 98 ns
输入电容Ciss 1490pF @25VVds
额定功率Max 36 W
下降时间 56 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 36W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.16 mm
宽度 4.7 mm
高度 9.19 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃
产品生命周期 Not Recommended for New Designs
包装方式 Rail
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FCPF11N60 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STF13NM60N 意法半导体 | 功能相似 | FCPF11N60和STF13NM60N的区别 |