FAIRCHILD SEMICONDUCTOR FCP11N60 功率场效应管, MOSFET, N沟道, 11 A, 650 V, 320 mohm, 10 V, 5 V
The is a 650V N-channel SuperFET® MOSFET, high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. This product is general usage and suitable for many different applications.
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- Ultra low gate charge
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- Low effective output capacitance
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- 100% Avalanche tested
额定电压DC 600 V
额定电流 11.0 A
针脚数 3
漏源极电阻 320 mΩ
极性 N-Channel
耗散功率 125 W
阈值电压 5 V
输入电容 1.15 nF
栅电荷 40.0 nC
漏源极电压Vds 600 V
漏源击穿电压 600 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 11.0 A
上升时间 98 ns
输入电容Ciss 1490pF @25VVds
额定功率Max 125 W
下降时间 56 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 125 W
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.1 mm
宽度 4.7 mm
高度 9.4 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FCP11N60 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STP13NM60N 意法半导体 | 功能相似 | FCP11N60和STP13NM60N的区别 |
STP20NM60 意法半导体 | 功能相似 | FCP11N60和STP20NM60的区别 |
SPP11N60C3 英飞凌 | 功能相似 | FCP11N60和SPP11N60C3的区别 |