FAIRCHILD SEMICONDUCTOR FDPF18N50 晶体管, MOSFET, N沟道, 18 A, 500 V, 0.22 ohm, 10 V, 5 V
The is an UniFET™ high voltage MOSFET produced based on planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction PFC, flat panel display FPD TV power, ATX and electronic lamp ballasts.
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- 100% Avalanche tested
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- 45nC Typical low gate charge
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- 25pF Typical low Crss
针脚数 3
漏源极电阻 0.22 Ω
极性 N-Channel
耗散功率 38.5 W
阈值电压 5 V
输入电容 2.86 nF
栅电荷 60.0 nC
漏源极电压Vds 500 V
漏源击穿电压 500 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 18.0 A
上升时间 165 ns
输入电容Ciss 2860pF @25VVds
额定功率Max 38.5 W
下降时间 90 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 38.5W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.16 mm
宽度 4.7 mm
高度 9.19 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDPF18N50 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STP15NK50ZFP 意法半导体 | 功能相似 | FDPF18N50和STP15NK50ZFP的区别 |
SIHF18N50D-E3 威世 | 功能相似 | FDPF18N50和SIHF18N50D-E3的区别 |