FAIRCHILD SEMICONDUCTOR FDB28N30TM 晶体管, MOSFET, N沟道, 28 A, 300 V, 108 mohm, 10 V, 5 V
The is a N-channel enhancement-mode Power FET produced using "s proprietary planar stripe DMOS technology. This advanced technology has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. It is suited for high efficient switched mode power supplies and active power factor correction.
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- Improved dV/dt capability
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- 100% Avalanche tested
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- Fast switching
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- 39nC Typical low gate charge
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- 35pF Typical low Crss
针脚数 2
漏源极电阻 108 mΩ
极性 N-Channel
耗散功率 250 W
阈值电压 5 V
输入电容 2.25 nF
漏源极电压Vds 300 V
连续漏极电流Ids 28.0 A
上升时间 135 ns
输入电容Ciss 2250pF @25VVds
额定功率Max 250 W
下降时间 69 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 250W Tc
安装方式 Surface Mount
引脚数 2
封装 TO-263-3
长度 10.67 mm
宽度 11.33 mm
高度 4.83 mm
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDB28N30TM Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FQB25N33TM 飞兆/仙童 | 类似代替 | FDB28N30TM和FQB25N33TM的区别 |