FAIRCHILD SEMICONDUCTOR FQPF9N90CT 功率场效应管, MOSFET, N沟道, 8 A, 900 V, 1.12 ohm, 10 V, 3 V
The is a N-channel QFET® enhancement-mode power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.
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- Low gate charge 45nC
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- Low Crss 14pF
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- 100% avalanche tested
通道数 1
针脚数 3
漏源极电阻 1.12 Ω
极性 N-Channel
耗散功率 68 W
阈值电压 3 V
漏源极电压Vds 900 V
漏源击穿电压 900 V
连续漏极电流Ids 8A
上升时间 120 ns
输入电容Ciss 2730pF @25VVds
额定功率Max 68 W
下降时间 75 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 68W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.36 mm
宽度 4.9 mm
高度 16.07 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15