FAIRCHILD SEMICONDUCTOR FDMC86160 晶体管, MOSFET, N沟道, 43 A, 100 V, 0.0112 ohm, 10 V, 2.9 V
The is a N-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance. It is well suited for applications where ultra-low RDS ON is required in small spaces such as High performance VRM, POL and O-ring functions. It is suitable for bridge topologies and synchronous rectifier applications.
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- High performance technology for extremely low RDS ON
针脚数 8
漏源极电阻 0.0112 Ω
极性 N-Channel
耗散功率 54 W
阈值电压 2.9 V
漏源极电压Vds 100 V
连续漏极电流Ids 9A
上升时间 3.6 ns
输入电容Ciss 1290pF @50VVds
额定功率Max 2.3 W
下降时间 3.4 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.3W Ta, 54W Tc
安装方式 Surface Mount
引脚数 8
封装 Power-33-8
长度 3.3 mm
宽度 3.3 mm
高度 0.75 mm
封装 Power-33-8
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15