FAIRCHILD SEMICONDUCTOR FDP61N20 晶体管, MOSFET, N沟道, 61 A, 200 V, 0.034 ohm, 10 V, 5 V
The is a 200V N-channel UniFET™ MOSFET based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode"s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100ns and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200ns and 4.5V/ns respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET"s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction PFC, flat panel display FPD TV power, ATX and electronic lamp ballasts. This product is general usage and suitable for many different applications.
额定电压DC 200 V
额定电流 61.0 A
通道数 1
针脚数 3
漏源极电阻 0.034 Ω
极性 N-Channel
耗散功率 417 W
阈值电压 5 V
输入电容 3.38 nF
栅电荷 75.0 nC
漏源极电压Vds 200 V
漏源击穿电压 200 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 6.10 A
上升时间 215 ns
输入电容Ciss 3380pF @25VVds
额定功率Max 417 W
下降时间 170 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 417W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.67 mm
宽度 4.83 mm
高度 9.4 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
FDP61N20 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STP40NF20 意法半导体 | 功能相似 | FDP61N20和STP40NF20的区别 |
STP75NF20 意法半导体 | 功能相似 | FDP61N20和STP75NF20的区别 |