FDP20N50F

FAIRCHILD SEMICONDUCTOR  FDP20N50F  晶体管, MOSFET, N沟道, 20 A, 500 V, 0.22 ohm, 10 V, 3 V

The is an UniFET™ N-channel High Voltage MOSFET produced based on Semiconductor"s planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode"s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dV/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET"s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction PFC, flat panel display FPD TV power, ATX and electronic lamp ballasts.

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Improve dV/dt capability

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100% Avalanche tested

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50nC Typical low gate charge

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27pF Typical low Crss