UniFET™ N 通道 MOSFET，Fairchild SemiconductorUniFET™ MOSFET 是 Fairchild Semiconductor 的高电压 MOSFET 系列。 它平面 MOSFET 中具有最小通态电阻，还提供卓越的切换性能和较高雪崩能量强度。 此外，内部栅极-源极 ESD 二极管让 UniFET-II™ MOSFET 可以耐受超过 2000V HBM 浪涌应力。 UniFET™ MOSFET 适用于开关电源转换器应用，如功率因数校正 PFC、平板显示屏 FPD 电视电源、ATX（先进技术扩展）和电子灯镇流器。
The is a 400V N-channel UniFET™ FRFET® MOSFET based on planar stripe and DMOS technology. This high voltage MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode"s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100ns and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200ns and 4.5V/ns respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET"s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction PFC, flat panel display FPD TV power, ATX and electronic lamp ballasts. This product is general usage and suitable for many different applications.
- .
- Low gate charge
- .
- 100% Avalanche tested
通道数 1
针脚数 3
漏源极电阻 0.15 Ω
极性 N-Channel
耗散功率 235 W
阈值电压 3 V
漏源极电压Vds 400 V
连续漏极电流Ids 23A
输入电容Ciss 3030pF @25VVds
额定功率Max 235 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 235W Tc
安装方式 Through Hole
引脚数 3
封装 TO-3-3
长度 16.2 mm
宽度 5 mm
高度 20.1 mm
封装 TO-3-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Rail, Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15