FAIRCHILD SEMICONDUCTOR FDB3632. 场效应管, MOSFET, N沟道, 100V, 80A, TO-263AB, 整卷
The is a 100V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. "s the latest medium voltage power MOSFET is optimized power switches combining small gate charge QG, small reverse recovery charge Qrr and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM figure of merit QGxRDSON of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
额定电压DC 100 V
额定电流 44.0 A
通道数 1
针脚数 3
漏源极电阻 7.5 mΩ
极性 N-Channel
耗散功率 310 W
阈值电压 4 V
输入电容 6.00 nF
栅电荷 84.0 nC
漏源极电压Vds 100 V
漏源击穿电压 100 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 80.0 A
上升时间 39 ns
输入电容Ciss 6000pF @25VVds
额定功率Max 310 W
下降时间 46 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 310W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.67 mm
宽度 9.65 mm
高度 4.83 mm
封装 TO-263-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
FDB3632 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
HUF75645S3S 飞兆/仙童 | 类似代替 | FDB3632和HUF75645S3S的区别 |
STB120NF10T4 意法半导体 | 功能相似 | FDB3632和STB120NF10T4的区别 |
STB80NF10T4 意法半导体 | 功能相似 | FDB3632和STB80NF10T4的区别 |