FAIRCHILD SEMICONDUCTOR FCPF400N80Z 功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.34 ohm, 10 V, 4.5 V
The is a N-channel SuperFET® II high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
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- Ultra low gate charge Qg = 43nC
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- Low effective output capacitance Coss.eff = 138pF
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- 100% avalanche tested
额定功率 35.7 W
针脚数 3
漏源极电阻 0.34 Ω
极性 N-Channel
耗散功率 35.7 W
阈值电压 4.5 V
漏源极电压Vds 800 V
连续漏极电流Ids 14A
上升时间 12 ns
输入电容Ciss 2350pF @100VVds
下降时间 2.6 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 35.7W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220F-3
长度 10.36 mm
宽度 4.9 mm
高度 16.07 mm
封装 TO-220F-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Rail, Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
香港进出口证 NLR