FAIRCHILD SEMICONDUCTOR FQA6N90C_F109 功率场效应管, MOSFET, N沟道, 6 A, 900 V, 1.93 ohm, 10 V, 5 V
The is a N-channel QFET® enhancement-mode power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.
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- Low gate charge 30nC
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- Low Crss 11pF
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- 100% avalanche tested
针脚数 3
漏源极电阻 1.93 Ω
极性 N-Channel
耗散功率 198 W
阈值电压 5 V
漏源极电压Vds 900 V
连续漏极电流Ids 6A
上升时间 90 ns
输入电容Ciss 1770pF @25VVds
额定功率Max 198 W
下降时间 60 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 198W Tc
安装方式 Through Hole
引脚数 3
封装 TO-3-3
长度 15.8 mm
宽度 5 mm
高度 18.9 mm
封装 TO-3-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQA6N90C_F109 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FQA5N90_F109 飞兆/仙童 | 类似代替 | FQA6N90C_F109和FQA5N90_F109的区别 |
FQA6N90_F109 飞兆/仙童 | 类似代替 | FQA6N90C_F109和FQA6N90_F109的区别 |