FAIRCHILD SEMICONDUCTOR FDA59N25 晶体管, MOSFET, N沟道, 59 A, 250 V, 49 mohm, 10 V, 5 V
The is an UniFET™ N-channel MOSFET produced using Semiconductor"s high voltage planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction PFC, flat panel display FPD TV power, ATX and electronic lamp ballasts.
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- 63nC Typical low gate charge
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- 70pF Typical low Crss
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- 100% Avalanche tested
通道数 1
针脚数 3
漏源极电阻 49 mΩ
极性 N-Channel
耗散功率 392 W
阈值电压 5 V
漏源极电压Vds 250 V
漏源击穿电压 250 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 59.0 A
上升时间 480 ns
输入电容Ciss 4020pF @25VVds
额定功率Max 392 W
下降时间 170 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 392W Tc
安装方式 Through Hole
引脚数 3
封装 TO-3-3
长度 16.2 mm
宽度 5 mm
高度 20.1 mm
封装 TO-3-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 Power Management, Consumer Electronics, Lighting
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
香港进出口证 NLR
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDA59N25 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
IRFP4768PBF 英飞凌 | 功能相似 | FDA59N25和IRFP4768PBF的区别 |