30V N沟道的PowerTrench SyncFET 30V N-Channel PowerTrench SyncFET
General Description
The is designed to replace a single TO-252 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDSON and low gate charge. The FDD6688S includes an integrated Schottky diode using ’s monolithic SyncFET technology.
Features
• 88 A, 30 V. RDSON = 5.1 mΩ @ VGS = 10 V
RDSON = 6.3 mΩ @ VGS = 4.5 V
• Low gate charge 31 nC typical
• Fast switching
• High performance trench technology for extremely low RDSON
Applications
• DC/DC converter
• Motor Drives
额定电压DC 30.0 V
额定电流 88.0 A
漏源极电阻 4.00 mΩ
极性 N-Channel
耗散功率 69 W
输入电容 3.29 nF
栅电荷 58.0 nC
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 88.0 A
上升时间 13 ns
输入电容Ciss 3290pF @15VVds
额定功率Max 1.3 W
下降时间 64 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 69W Ta
安装方式 Surface Mount
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.39 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99