FAIRCHILD SEMICONDUCTOR FCD9N60NTM 功率场效应管, MOSFET, N沟道, 9 A, 600 V, 0.33 ohm, 10 V, 3 V
The is a N-channel SuperFET® high voltage super-junction MOSFET employs a deep Trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp ON-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
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- Ultra low gate charge Qg = 17.8nC
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- Low effective output capacitance Coss.eff = 122pF
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- 100% avalanche tested
针脚数 3
漏源极电阻 0.33 Ω
极性 N-Channel
耗散功率 83.3 W
阈值电压 3 V
漏源极电压Vds 600 V
连续漏极电流Ids 9A
上升时间 8.7 ns
输入电容Ciss 1000pF @100VVds
额定功率Max 92.6 W
下降时间 10.2 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 92.6W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.39 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15