600V N沟道MOSFET 600V N-Channel MOSFET
Description
SuperFET™ is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Features
• 650V @TJ= 150°C
•Typ. RDSon= 0.32Ω
• Fast Recovery Type trr= 120ns
• Ultra Low Gate Charge typ. Qg = 40nC
• Low Effective Output Capacitance typ. Coss eff.=95pF
• 100% avalanche tested
额定电压DC 600 V
额定电流 11.0 A
通道数 1
漏源极电阻 380 mΩ
极性 N-Channel
耗散功率 125 W
输入电容 1.15 nF
栅电荷 40.0 nC
漏源极电压Vds 600 V
漏源击穿电压 600 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 11.0 A
上升时间 98 ns
输入电容Ciss 1490pF @25VVds
额定功率Max 36 W
下降时间 56 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 36W Tc
安装方式 Through Hole
封装 TO-220-3
长度 10.36 mm
宽度 4.9 mm
高度 16.07 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99