FAIRCHILD SEMICONDUCTOR FQA8N100C 功率场效应管, MOSFET, N沟道, 8 A, 1 kV, 1.2 ohm, 10 V, 5 V
The is a N-channel QFET® enhancement-mode power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.
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- Low gate charge 53nC
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- Low Crss 16pF
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- 100% avalanche tested
额定电压DC 1.00 kV
额定电流 8.00 A
通道数 1
针脚数 3
漏源极电阻 1.2 Ω
极性 N-Channel
耗散功率 225 W
阈值电压 5 V
漏源极电压Vds 1000 V
漏源击穿电压 1000 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 8.00 A
上升时间 95 ns
输入电容Ciss 3220pF @25VVds
额定功率Max 225 W
下降时间 80 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 225W Tc
安装方式 Through Hole
引脚数 3
封装 TO-3-3
长度 15.8 mm
宽度 5 mm
高度 18.9 mm
封装 TO-3-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQA8N100C Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
2SK2613F 东芝 | 功能相似 | FQA8N100C和2SK2613F的区别 |