FAIRCHILD SEMICONDUCTOR FDA70N20 晶体管, MOSFET, N沟道, 70 A, 200 V, 35 mohm, 10 V, 5 V
The is an UniFET™ N-channel MOSFET produced using Semiconductor"s high voltage planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction PFC, flat panel display FPD TV power, ATX and electronic lamp ballasts.
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- 66nC Typical low gate charge
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- 89pF Typical low Crss
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- 100% Avalanche tested
额定电压DC 200 V
额定电流 70.0 A
通道数 1
针脚数 3
漏源极电阻 35 mΩ
极性 N-Channel
耗散功率 417 W
阈值电压 5 V
输入电容 3.05 nF
栅电荷 66.0 nC
漏源极电压Vds 200 V
漏源击穿电压 200 V
连续漏极电流Ids 70.0 A
上升时间 235 ns
输入电容Ciss 3970pF @25VVds
额定功率Max 417 W
下降时间 39 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 417 W
安装方式 Through Hole
引脚数 3
封装 TO-3-3
长度 15.8 mm
宽度 5 mm
高度 20.1 mm
封装 TO-3-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDA70N20 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STW75NF20 意法半导体 | 功能相似 | FDA70N20和STW75NF20的区别 |