FAIRCHILD SEMICONDUCTOR FQD3P50TM 晶体管, MOSFET, P沟道, -2.1 A, -500 V, 3.9 ohm, -10 V, -5 V 新
General Description
These P-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge.
Features
• -2.1A, -500V, RDSon = 4.9Ω @VGS = -10 V
• Low gate charge typical 18 nC
• Low Crss typical 9.5 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
额定电压DC -500 V
额定电流 -2.10 A
针脚数 3
漏源极电阻 3.9 Ω
极性 P-Channel
耗散功率 2.5 W
漏源极电压Vds 500 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 2.10 A
上升时间 56 ns
输入电容Ciss 660pF @25VVds
额定功率Max 2.5 W
下降时间 45 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5W Ta, 50W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.39 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQD3P50TM Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FQD3P50TF 飞兆/仙童 | 类似代替 | FQD3P50TM和FQD3P50TF的区别 |
STD3PK50Z 意法半导体 | 功能相似 | FQD3P50TM和STD3PK50Z的区别 |