FAIRCHILD SEMICONDUCTOR FDA38N30 晶体管, MOSFET, N沟道, 38 A, 300 V, 0.07 ohm, 10 V, 5 V
The is an UniFET™ N-channel MOSFET produced using Semiconductor"s high voltage planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction PFC, flat panel display FPD TV power, ATX and electronic lamp ballasts.
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- 60nC Typical low gate charge
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- 60pF Typical low Crss
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- 100% Avalanche tested
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- ESD Improved capability
通道数 1
针脚数 3
漏源极电阻 0.07 Ω
极性 N-Channel
耗散功率 312 W
阈值电压 5 V
漏源极电压Vds 300 V
漏源击穿电压 300 V
连续漏极电流Ids 38A
上升时间 110 ns
输入电容Ciss 2600pF @25VVds
额定功率Max 312 W
下降时间 54 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 312W Tc
安装方式 Through Hole
引脚数 3
封装 TO-3-3
长度 16.2 mm
宽度 5 mm
高度 18.9 mm
封装 TO-3-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15