FAIRCHILD SEMICONDUCTOR FDB024N04AL7 晶体管, MOSFET, N沟道, 100 A, 40 V, 0.002 ohm, 10 V, 1 V
PowerTrench® N 通道 MOSFET,超过 60A, Semiconductor
得捷:
MOSFET N-CH 40V 100A TO263-7
欧时:
Fairchild Semiconductor N沟道 MOSFET 晶体管 FDB024N04AL7, 219 A, Vds=40 V, 7引脚 D2PAK封装
e络盟:
FAIRCHILD SEMICONDUCTOR FDB024N04AL7 晶体管, MOSFET, N沟道, 100 A, 40 V, 0.002 ohm, 10 V, 1 V
艾睿:
Trans MOSFET N-CH 40V 219A 7-Pin6+Tab D2PAK T/R
安富利:
This N-Channel MOSFET is produced using advance Power Trench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Chip1Stop:
Trans MOSFET N-CH 40V 219A 7-Pin6+Tab D2PAK T/R
Win Source:
MOSFET N-CH 40V D2PAK-7
DeviceMart:
MOSFET N-CH 40V D2PAK-7
针脚数 7
漏源极电阻 0.002 Ω
极性 N-Channel
耗散功率 214 W
阈值电压 1 V
漏源极电压Vds 40 V
连续漏极电流Ids 219A
输入电容Ciss 7300pF @25VVds
额定功率Max 214 W
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 214W Tc
安装方式 Surface Mount
引脚数 7
封装 TO-263-7
长度 10.8 mm
宽度 4.3 mm
高度 9.4 mm
封装 TO-263-7
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15