FAIRCHILD SEMICONDUCTOR FDB024N06 晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0018 ohm, 10 V, 3.5 V
The is a N-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification for ATX/server/telecom PSU, battery protection circuit and renewable system.
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- Fast switching speed
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- Low gate charge
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability
针脚数 3
漏源极电阻 0.0018 Ω
极性 N-Channel
耗散功率 395 W
阈值电压 3.5 V
漏源极电压Vds 60 V
连续漏极电流Ids 265A
输入电容Ciss 14885pF @25VVds
额定功率Max 395 W
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 395W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.67 mm
宽度 9.65 mm
高度 4.83 mm
封装 TO-263-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDB024N06 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
IRFS3006PBF 英飞凌 | 功能相似 | FDB024N06和IRFS3006PBF的区别 |
IRFS7530TRLPBF 英飞凌 | 功能相似 | FDB024N06和IRFS7530TRLPBF的区别 |
IRFS7530PBF 英飞凌 | 功能相似 | FDB024N06和IRFS7530PBF的区别 |