FAIRCHILD SEMICONDUCTOR FQA140N10 晶体管, MOSFET, N沟道, 140 A, 100 V, 0.008 ohm, 10 V, 4 V
The is a QFET® N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
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- 220nC Typical low gate charge
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- 470pF Typical low Crss
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- 100% Avalanche tested
额定电压DC 100 V
额定电流 140 A
针脚数 3
漏源极电阻 0.008 Ω
极性 N-Channel
耗散功率 375 W
阈值电压 4 V
漏源极电压Vds 100 V
漏源击穿电压 100 V
栅源击穿电压 ±25.0 V
连续漏极电流Ids 140 A
上升时间 940 ns
输入电容Ciss 7900pF @25VVds
额定功率Max 375 W
下降时间 360 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 375000 mW
安装方式 Through Hole
引脚数 3
封装 TO-3-3
长度 15.8 mm
宽度 5 mm
高度 18.9 mm
封装 TO-3-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99