330 V PDP沟道IGBT 330 V PDP Trench IGBT
General Description
Using novel trench IGBT Technology, ®’s new series of trench IGBTs offer the optimum performance for PDP TV applications where low conduction and switching losses are essential.
Features
• High Current Capability
• Low Saturation Voltage: VCEsat = 1.68 V @ IC = 180 A
• High Input Impedance
• RoHS Complaint
Applications
• PDP TV