FDA24N50F

N沟道MOSFET 500V ， 24A ， 0.2Ω N-Channel MOSFET 500V, 24A, 0.2Ω

Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe,DMOS technology.

This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.

Features

•RDSon = 0.166Ω Typ.@ VGS= 10V, ID= 12A

• Low Gate Charge Typ. 65nC

• Low Crss Typ. 32pF

• Fast Switching

• 100% Avalanche Tested

• Improved dv/dt Capability

• RoHS Compliant