FAIRCHILD SEMICONDUCTOR FDB8030L 晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0031 ohm, 10 V, 1.5 V
The is a logic level N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster-switching and lower gate charge than other MOSFETS with comparable RDS ON specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies and DC-to-DC power supply designs with higher overall efficiency. The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
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- Critical DC electrical parameters specified at elevated temperature
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- High performance Trench technology for extremely low RDS ON
额定电压DC 30.0 V
额定电流 80.0 A
针脚数 3
漏源极电阻 0.0031 Ω
极性 N-Channel
耗散功率 187 W
阈值电压 1.5 V
输入电容 10.5 nF
栅电荷 120 nC
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 80.0 A
上升时间 185 ns
输入电容Ciss 10500pF @15VVds
额定功率Max 187 W
下降时间 200 ns
工作温度Max 175 ℃
工作温度Min -65 ℃
耗散功率Max 187W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.97 mm
宽度 9.65 mm
高度 4.83 mm
封装 TO-263-3
工作温度 -65℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDB8030L Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STB80NF10T4 意法半导体 | 功能相似 | FDB8030L和STB80NF10T4的区别 |
IPB034N03LGATMA1 英飞凌 | 功能相似 | FDB8030L和IPB034N03LGATMA1的区别 |
STB80NF03L-04T4 意法半导体 | 功能相似 | FDB8030L和STB80NF03L-04T4的区别 |