FAIRCHILD SEMICONDUCTOR FDA50N50 晶体管, MOSFET, N沟道, 48 A, 500 V, 0.089 ohm, 10 V, 5 V
The is an UniFET™ N-channel MOSFET produced using Semiconductor"s high voltage planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction PFC, flat panel display FPD TV power, ATX and electronic lamp ballasts.
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- Improved dV/dt capability
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- 105nC Typical low gate charge
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- 45pF Typical low Crss
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- 100% Avalanche tested
额定电压DC 500 V
额定电流 48.0 A
额定功率 625 W
针脚数 3
漏源极电阻 0.089 Ω
极性 N-Channel
耗散功率 625 W
阈值电压 5 V
输入电容 4.98 nF
栅电荷 105 nC
漏源极电压Vds 500 V
漏源击穿电压 500 V
连续漏极电流Ids 48.0 A
上升时间 360 ns
输入电容Ciss 6460pF @25VVds
额定功率Max 625 W
下降时间 230 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 625W Tc
安装方式 Through Hole
引脚数 3
封装 TO-3-3
长度 15.6 mm
宽度 4.8 mm
高度 19.9 mm
封装 TO-3-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 Power Management, Consumer Electronics, Lighting
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDA50N50 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STW45NM50 意法半导体 | 功能相似 | FDA50N50和STW45NM50的区别 |
STW28NM50N 意法半导体 | 功能相似 | FDA50N50和STW28NM50N的区别 |
SPA07N60C3 英飞凌 | 功能相似 | FDA50N50和SPA07N60C3的区别 |