300V N沟道MOSFET 300V N-Channel MOSFET
Description
UniFET™ MOSFET is Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction PFC, flat panel display FPD TV power, ATX and electronic lamp ballasts.
Features
• RDSon = 70 m Typ. @ VGS = 10 V, ID = 19 A
• Low Gate Charge Typ. 60 nC
• Low Crss Typ. 60 pF
• 100% Avalanche Tested
• ESD Improved Capability
• RoHS Compliant
Applications
• PDP TV
• Uninterruptible Power Supply
• AC-DC Power Supply
额定电压DC 300 V
额定电流 38.4 A
漏源极电阻 85.0 mΩ
极性 N-Channel
耗散功率 290 W
漏源极电压Vds 300 V
漏源击穿电压 300 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 38.4 A
上升时间 430 ns
输入电容Ciss 4400pF @25VVds
额定功率Max 290 W
下降时间 190 ns
耗散功率Max 290W Tc
安装方式 Through Hole
封装 TO-3-3
封装 TO-3-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQA38N30 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STD18N55M5 意法半导体 | 功能相似 | FQA38N30和STD18N55M5的区别 |
STD6N95K5 意法半导体 | 功能相似 | FQA38N30和STD6N95K5的区别 |
STW75NF30 意法半导体 | 功能相似 | FQA38N30和STW75NF30的区别 |