FAIRCHILD SEMICONDUCTOR FCP16N60N 功率场效应管, MOSFET, N沟道, 16 A, 600 V, 170 mohm, 10 V, 2 V
The is a N-channel SupreMOS® high voltage super-junction MOSFET employs a deep Trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp ON-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
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- Ultra low gate charge Qg = 40.2nC
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- Low effective output capacitance Coss.eff = 176pF
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- 100% avalanche tested
针脚数 3
漏源极电阻 0.17 Ω
极性 N-Channel
耗散功率 134.4 W
阈值电压 2 V
漏源极电压Vds 600 V
连续漏极电流Ids 16.0 A
上升时间 15.5 ns
输入电容Ciss 2170pF @100VVds
额定功率Max 134.4 W
下降时间 20.2 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 134.4W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.67 mm
宽度 4.83 mm
高度 9.4 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FCP16N60N Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STP22NM60N 意法半导体 | 功能相似 | FCP16N60N和STP22NM60N的区别 |
STP24NM60N 意法半导体 | 功能相似 | FCP16N60N和STP24NM60N的区别 |
AOT20S60L 万代半导体 | 功能相似 | FCP16N60N和AOT20S60L的区别 |