FAIRCHILD SEMICONDUCTOR FDB86135 晶体管, MOSFET, N沟道, 120 A, 100 V, 0.003 ohm, 10 V, 2 V
The is a N-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process that incorporates shielded gate technology. This process has been optimized for the ON-state resistance and yet maintains superior switching performance. It is suitable for use in DC-to-DC primary bridge, DC-to-DC synchronous rectification and hot swap application.
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- Fast-switching speed
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- Low gate charge
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability
通道数 1
针脚数 3
漏源极电阻 0.003 Ω
极性 N-Channel
耗散功率 227 W
阈值电压 2 V
漏源极电压Vds 100 V
漏源击穿电压 100 V
连续漏极电流Ids 176A
输入电容Ciss 7295pF @25VVds
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 2.4W Ta, 227W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.67 mm
宽度 9.65 mm
高度 4.83 mm
封装 TO-263-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDB86135 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
IPB038N12N3GATMA1 英飞凌 | 功能相似 | FDB86135和IPB038N12N3GATMA1的区别 |