FAIRCHILD SEMICONDUCTOR FCH22N60N 功率场效应管, MOSFET, N沟道, 22 A, 600 V, 0.14 ohm, 10 V, 3 V
The is a N-channel SuperFET® high voltage super-junction MOSFET employs a deep Trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp ON-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
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- Ultra low gate charge Qg = 45nC
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- Low effective output capacitance Coss.eff = 196.4pF
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- 100% avalanche tested
通道数 1
针脚数 3
漏源极电阻 0.14 Ω
极性 N-Channel
耗散功率 205 W
阈值电压 3 V
漏源极电压Vds 600 V
漏源击穿电压 600 V
连续漏极电流Ids 22A
上升时间 16.7 ns
输入电容Ciss 1950pF @100VVds
额定功率Max 205 W
下降时间 4 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 205W Tc
安装方式 Through Hole
引脚数 3
封装 TO-247-3
长度 15.95 mm
宽度 5.03 mm
高度 21 mm
封装 TO-247-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15