FAIRCHILD SEMICONDUCTOR FCB36N60NTM 功率场效应管, MOSFET, N沟道, 36 A, 600 V, 0.081 ohm, 10 V, 2 V
The is a N-channel SuperFET® high voltage super-junction MOSFET employs a deep Trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp ON-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
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- Ultra low gate charge Qg = 86nC
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- Low effective output capacitance Coss.eff = 361pF
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- 100% avalanche tested
通道数 1
针脚数 3
漏源极电阻 0.081 Ω
极性 N-Channel
耗散功率 312 W
阈值电压 2 V
漏源极电压Vds 600 V
漏源击穿电压 600 V
连续漏极电流Ids 36A
上升时间 22 ns
输入电容Ciss 4785pF @100VVds
额定功率Max 312 W
下降时间 4 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 312W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.67 mm
宽度 9.65 mm
高度 4.83 mm
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FCB36N60NTM Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FCP36N60N 飞兆/仙童 | 完全替代 | FCB36N60NTM和FCP36N60N的区别 |
STB42N65M5 意法半导体 | 功能相似 | FCB36N60NTM和STB42N65M5的区别 |