FAIRCHILD SEMICONDUCTOR FCH47N60_F133 功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.058 ohm, 10 V, 3 V
The is a N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
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- Ultra low gate charge Qg = 210nC
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- Low effective output capacitance Coss.eff = 420pF
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- 100% avalanche tested
针脚数 3
漏源极电阻 0.058 Ω
极性 N-Channel
耗散功率 417 W
阈值电压 3 V
漏源极电压Vds 600 V
连续漏极电流Ids 47A
输入电容Ciss 8000pF @25VVds
额定功率Max 417 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 417W Tc
安装方式 Through Hole
引脚数 3
封装 TO-247-3
高度 20.82 mm
封装 TO-247-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FCH47N60_F133 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STW45N65M5 意法半导体 | 功能相似 | FCH47N60_F133和STW45N65M5的区别 |
IPW60R070C6 英飞凌 | 功能相似 | FCH47N60_F133和IPW60R070C6的区别 |
IPW60R075CP 英飞凌 | 功能相似 | FCH47N60_F133和IPW60R075CP的区别 |