800V N沟道MOSFET 800V N-Channel MOSFET
Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
Features
• 10A, 800V, RDSon = 1.1Ω @VGS = 10 V
• Low gate charge typical 44 nC
• Low Crss typical 15pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
额定电压DC 800 V
额定电流 10.0 A
漏源极电阻 1.10 Ω
极性 N-Channel
耗散功率 240W Tc
漏源极电压Vds 800 V
漏源击穿电压 800 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 10.0 A
输入电容Ciss 2800pF @25VVds
额定功率Max 240 W
耗散功率Max 240W Tc
安装方式 Through Hole
封装 TO-3-3
封装 TO-3-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
FQA10N80C Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FQA10N80C_F109 飞兆/仙童 | 类似代替 | FQA10N80C和FQA10N80C_F109的区别 |