500V N沟道MOSFET 500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies,
where the body diode is used such as phase-shift ZVS, basic full-bridge topology.
Features
• 24A, 500V, RDSon= 0.2Ω@VGS= 10 V
• Low gate charge typical 90 nC
• Low Crss typical 55 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode max, 250ns
额定电压DC 500 V
额定电流 24.0 A
漏源极电阻 200 mΩ
极性 N-Channel
耗散功率 290W Tc
漏源极电压Vds 500 V
漏源击穿电压 500 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 24.0 A
输入电容Ciss 4500pF @25VVds
额定功率Max 290 W
耗散功率Max 290W Tc
安装方式 Through Hole
封装 TO-3-3
封装 TO-3-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
FQA24N50F Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STW20NK50Z 意法半导体 | 功能相似 | FQA24N50F和STW20NK50Z的区别 |
STD6N95K5 意法半导体 | 功能相似 | FQA24N50F和STD6N95K5的区别 |
IXFK64N50P IXYS Semiconductor | 功能相似 | FQA24N50F和IXFK64N50P的区别 |