双N和P沟道功率沟槽 Dual N & P-Channel Power Trench
General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
■ Q1: N-Channel
7.0A, 30V RDSon = 0.030Ω @ VGS = 10V
RDSon = 0.044Ω @ VGS = 4.5V
■ Q2: P-Channel
-5A, -30V RDSon = 0.052Ω @ VGS = -10V
RDSon = 0.080Ω @ VGS = -4.5V
■ Fast switching speed
■ High power and handling capability in a widely used surface mount package
额定电流 7.00 A
极性 N-Channel, P-Channel
耗散功率 2 W
输入电容 528 pF
栅电荷 9.60 nC
漏源极电压Vds 30 V
漏源击穿电压 ±30.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 5.00 A
上升时间 13.0 ns
输入电容Ciss 575pF @15VVds
额定功率Max 900 mW
耗散功率Max 900 mW
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Obsolete
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
FDS8962C Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STS8C5H30L 意法半导体 | 功能相似 | FDS8962C和STS8C5H30L的区别 |
FDS8962C_NL 飞兆/仙童 | 功能相似 | FDS8962C和FDS8962C_NL的区别 |