500V N沟道MOSFET 500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features
• 5A, 500V, RDSon= 1.4Ω@VGS= 10 V
• Low gate charge typical 18nC
• Low Crss typical 15pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
额定电压DC 500 V
额定电流 5.00 A
通道数 1
漏源极电阻 1.4 Ω
极性 N-Channel
耗散功率 73 W
漏源极电压Vds 500 V
漏源击穿电压 500 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 5.00 A
上升时间 46 ns
输入电容Ciss 625pF @25VVds
额定功率Max 73 W
下降时间 48 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 73W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.67 mm
宽度 4.7 mm
高度 16.3 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Obsolete
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
FQP5N50C Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FQU5N50CTU 飞兆/仙童 | 功能相似 | FQP5N50C和FQU5N50CTU的区别 |