75V N沟道MOSFET 75V N-Channel MOSFET
Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
Features
• 75A, 75V, RDSon = 0.011Ω @VGS = 10 V
• Low gate charge typical 150 nC
• Low Crss typical 85 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
通道数 1
漏源极电阻 11 mΩ
极性 N-Channel
耗散功率 131 W
漏源极电压Vds 75 V
漏源击穿电压 75 V
连续漏极电流Ids 75.0 A
上升时间 68 ns
输入电容Ciss 4468pF @25VVds
额定功率Max 137 W
下降时间 93 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 131W Tc
安装方式 Through Hole
封装 TO-220-3
长度 10.67 mm
宽度 4.7 mm
高度 16.3 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
FDP75N08 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDP75N08A 飞兆/仙童 | 类似代替 | FDP75N08和FDP75N08A的区别 |
IRF2807ZPBF 英飞凌 | 功能相似 | FDP75N08和IRF2807ZPBF的区别 |
HUF75545S3 飞兆/仙童 | 功能相似 | FDP75N08和HUF75545S3的区别 |