600V N沟道MOSFET 600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
Features
• 2.0A, 600V, RDSon= 3.6Ω@VGS= 10 V
• Low gate charge typical 10 nC
• Low Crss typical 5.5 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
额定电压DC 600 V
额定电流 2.00 A
漏源极电阻 3.60 Ω
极性 N-Channel
耗散功率 34 W
漏源极电压Vds 600 V
漏源击穿电压 600 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 2.00 A
上升时间 30 ns
输入电容Ciss 450pF @25VVds
额定功率Max 34 W
下降时间 30 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 34W Tc
安装方式 Through Hole
封装 TO-220-3
长度 10.67 mm
宽度 4.7 mm
高度 16.3 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99