200V N沟道MOSFET 200V N-Channel MOSFET
Description
This N-Channel enhancement mode power field effect transistors are produced using Semiconductor’s proprietary planar stripe, DMOS technology.
Features
• 6.8 A, 200 V, RDSon= 0.36 ΩMax. @ VGS= 10 V
• Low Gate Charge Typ. 13.5 nC
• Low Crss Typ. 13 pF
• 100% Avalanche Tested
• Improved dv/dt capability
立创商城:
N沟道 200V 6.8A
艾睿:
Trans MOSFET N-CH 200V 6.8A 3-Pin3+Tab TO-220F Rail
额定电压DC 200 V
额定电流 10.0 A
漏源极电阻 360 mΩ
极性 N-Channel
耗散功率 40W Tc
漏源极电压Vds 200 V
漏源击穿电压 200 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 6.80 A
输入电容Ciss 670pF @25VVds
额定功率Max 40 W
耗散功率Max 40W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99