400V N沟道MOSFET 400V N-CHANNEL MOSFET
These N-Channel enhancement mode power field effect transistors are produced using s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge.
Product Highlights
17.2A, 400V, R
DSon
= 0.27
W
@V
GS
= 10 V
Low gate charge typical 45 nC
Low Crss typical 30 pF
Fast switching
100% avalanche tested
Improved dv/dt capability
额定电压DC 400 V
额定电流 17.2 A
通道数 1
漏源极电阻 270 mΩ
极性 N-Channel
耗散功率 190 W
漏源极电压Vds 400 V
漏源击穿电压 400 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 17.2 A
上升时间 185 ns
输入电容Ciss 2300pF @25VVds
额定功率Max 190 W
下降时间 105 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 190W Tc
安装方式 Through Hole
封装 TO-3-3
长度 16.2 mm
宽度 5 mm
高度 20.1 mm
封装 TO-3-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQA17N40 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FQA24N60 安森美 | 功能相似 | FQA17N40和FQA24N60的区别 |