650V N沟道MOSFET 650V N-Channel MOSFET
Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
Features
• 7A, 650V, RDSon = 1.4Ω @VGS = 10 V
• Low gate charge typical 28 nC
• Low Crss typical 12 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
额定电压DC 650 V
额定电流 7.00 A
通道数 1
漏源极电阻 1.4 Ω
极性 N-Channel
耗散功率 173 W
输入电容 1.24 nF
栅电荷 36.0 nC
漏源极电压Vds 650 V
漏源击穿电压 650 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 7.00 A
上升时间 50 ns
输入电容Ciss 1245pF @25VVds
额定功率Max 173 W
下降时间 55 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 173W Tc
安装方式 Surface Mount
引脚数 2
封装 TO-263-3
长度 10.67 mm
宽度 9.65 mm
高度 4.83 mm
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99