FQPF10N60CF

600V N沟道MOSFET 600V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching perfor mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features

• 9A, 600V, RDSon = 0.8Ω @VGS = 10 V

• Low gate charge typical 44 nC

• Low Crss typical 18 pF

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability